Magnetoresistive random-access memory (MRAM) technology is one of the current methods for memory storage. Its advantages over earlier storage devices lie in the fact that here high speed, high density as well as low power consumption are combined to provide a nonvolatile robust mechanism for data storage. Unlike earlier memory devices, MRAM technology uses magnetic information to store data. Basically, the structure consists of two ferromagnetic thin layers separated by an ultrathin insulating dielectric layer which usually is MgO. This results in a magnetic tunnel junction (MTJ). The device makes use of the fact that electrons also carry a spin beside a current. Put simply, in a ferromagnetic layer, the electrons align their spins parallel to the direction of magnetization. Electrons with their corresponding spin of this layer can pass through the insulating layer easily if the magnetic alignment of the second ferromagnetic layer is parallel to the first layer. This results in...
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